AT28BV64-30TI【PDF 1/15 页】IC EEPROM 64KBIT 300NS 28TSOP

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Features

? 2.7V to 3.6V Supply

– Full Read and Write Operation

? Low Power Dissipation

– 8 mA Active Current

– 50 μA CMOS Standby Current

Read Access Time – 300 ns

Byte Write – 3 ms

Direct Microprocessor Control

– DATA Polling

– READY/BUSY Open Drain Output

High Reliability CMOS Technology

– Endurance: 100,000 Cycles

– Data Retention: 10 Years

JEDEC Approved Byte-Wide Pinout

Industrial Temperature Ranges

64K (8K x 8)

Battery-Voltage

Parallel

EEPROMs

1. Description

The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable

Read-only Memory specifically designed for battery powered applications. Its 64K of

memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced

nonvolatile CMOS technology, the device offers access times to 200 ns with power

AT28BV64

Not Recommended

for New Designs.

dissipation less than 30 mW. When the device is deselected the standby current is

less than 50 μA.

The AT28BV64 is accessed like a Static RAM for the read or write cycles without the

need for external components. During a byte write, the address and data are latched

internally, freeing the microprocessor address and data bus for other operations. Fol-

lowing the initiation of a write cycle, the device will go to a busy state and

automatically clear and write the latched data using an internal control timer. The

device includes two methods for detecting the end of a write cycle, level detection of

RDY/BUSY and DATA polling of I/O 7 . Once the end of a write cycle has been

detected, a new access for a read or write can begin.

Atmel’s AT28BV64 has additional features to ensure high quality and manufacturabil-

ity. The device utilizes error correction internally for extended endurance and for

improved data retention characteristics. An extra 32-bytes of EEPROM are available

for device identification or tracking.

0493C–PEEPR–08/07

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